FQB7N3

FQB7N30TM vs FQB7N30 vs FQB7N30TM-NL

 
PartNumberFQB7N30TMFQB7N30FQB7N30TM-NL
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance700 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.3 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time75 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.011640 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB7N30TM MOSFET 300V N-Channel QFET
FQB7N30 Neu und Original
FQB7N30TM-NL Neu und Original
ON Semiconductor
ON Semiconductor
FQB7N30TM MOSFET N-CH 300V 7A D2PAK
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