FQB9N0

FQB9N08TM vs FQB9N08 vs FQB9N08L

 
PartNumberFQB9N08TMFQB9N08FQB9N08L
DescriptionMOSFET 80V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current9.3 A--
Rds On Drain Source Resistance210 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min3.6 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time28 ns--
Factory Pack Quantity750--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns--
Typical Turn On Delay Time2.8 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB9N08TM MOSFET 80V N-Channel QFET
FQB9N08 Neu und Original
FQB9N08L Neu und Original
FQB9N08TM-NL Neu und Original
FQB9N08TMFSC Neu und Original
ON Semiconductor
ON Semiconductor
FQB9N08LTM MOSFET N-CH 80V 9.3A D2PAK
FQB9N08TM MOSFET N-CH 80V 9.3A D2PAK
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