PartNumber | FQD12N20LTM | FQD12N20LTM-F085 | FQD12N20LTF |
Description | MOSFET 200V N-Ch QFET Logic Level | MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab | MOSFET 200V N-Ch QFET Logic Level |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
Id Continuous Drain Current | 9 A | 9 A | 9 A |
Rds On Drain Source Resistance | 280 mOhms | 280 mOhms | 280 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | 2.39 mm | 2.39 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | FQD12N20L | QFET | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | Enhancement Mode Field Effect Transistor | MOSFET |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 11.6 S | 11.6 S | 11.6 S |
Fall Time | 120 ns | 120 ns | 120 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 190 ns | 190 ns | 190 ns |
Factory Pack Quantity | 2500 | 2500 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 60 ns | 60 ns |
Typical Turn On Delay Time | 15 ns | 15 ns | 15 ns |
Part # Aliases | FQD12N20LTM_NL | FQD12N20LTM_F085 | - |
Unit Weight | 0.009184 oz | 0.009184 oz | 0.139332 oz |