FQD12P

FQD12P10TF vs FQD12P10 vs FQD12P10TF_NB82105

 
PartNumberFQD12P10TFFQD12P10FQD12P10TF_NB82105
DescriptionMOSFET 100V P-Channel QFET
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current9.4 A--
Rds On Drain Source Resistance290 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Height2.39 mm--
Length6.73 mm--
Transistor Type1 P-Channel-1 P-Channel
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.3 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time160 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Id Continuous Drain Current--- 9.4 A
Vds Drain Source Breakdown Voltage--- 100 V
Rds On Drain Source Resistance--290 mOhms
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
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ON Semiconductor
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