FQD19

FQD19N10LTM vs FQD19N10 vs FQD19N10L

 
PartNumberFQD19N10LTMFQD19N10FQD19N10L
DescriptionMOSFET 100V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current15.6 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD19N10L--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min14 S--
Fall Time140 ns--
Product TypeMOSFET--
Rise Time410 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.009184 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD19N10TM MOSFET 100V N-Ch QFET Logic Level
FQD19N10LTM MOSFET 100V N-Ch QFET Logic Level
FQD19N10TF MOSFET 100V N-Ch QFET Logic Level
FQD19N10 Neu und Original
FQD19N10L Neu und Original
FQD19N10LTM-NL Neu und Original
FQD19N10TM,FQD19N10 Neu und Original
FQD19P10 Neu und Original
FQD19N10LTM-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
FQD19N10LTF MOSFET N-CH 100V 15.6A DPAK
FQD19N10LTM MOSFET N-CH 100V 15.6A DPAK
FQD19N10TF MOSFET N-CH 100V 15.6A DPAK
FQD19N10TM MOSFET N-CH 100V 15.6A DPAK
FQD19N10TM_F080 MOSFET N-CH 100V 15.6A DPAK
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