FQD1N5

FQD1N50TF vs FQD1N50 vs FQD1N50B

 
PartNumberFQD1N50TFFQD1N50FQD1N50B
DescriptionMOSFET 500V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current1.1 A--
Rds On Drain Source Resistance9 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.98 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD1N50TM MOSFET 500V N-Channel QFET
FQD1N50TF MOSFET 500V N-Channel QFET
FQD1N50 Neu und Original
FQD1N50B Neu und Original
FQD1N50TFFSC Neu und Original
ON Semiconductor
ON Semiconductor
FQD1N50TF MOSFET N-CH 500V 1.1A DPAK
FQD1N50TM MOSFET N-CH 500V 1.1A DPAK
Top