 |  | |
| PartNumber | FQD3N60CTM-WS | FQD3N60CTM-WS-CUT TAPE |
| Description | MOSFET 600V 2.4A N-Channel Q-FET | |
| Manufacturer | ON Semiconductor | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - |
| Id Continuous Drain Current | 2.4 A | - |
| Rds On Drain Source Resistance | 3.4 Ohms | - |
| Vgs Gate Source Voltage | 30 V | - |
| Qg Gate Charge | 10.5 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 50 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | QFET | - |
| Packaging | Reel | - |
| Height | 2.39 mm | - |
| Length | 6.73 mm | - |
| Series | FQD3N60CTM_WS | - |
| Transistor Type | 1 N-Channel | - |
| Width | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | - |
| Fall Time | 35 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 30 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | - |
| Typical Turn On Delay Time | 12 ns | - |
| Part # Aliases | FQD3N60CTM_WS | - |
| Unit Weight | 0.009184 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD3N60CTM-WS | MOSFET 600V 2.4A N-Channel Q-FET | |
ON Semiconductor |
FQD3N60CTM-WS | MOSFET N-CH 600V 2.4A DPAK | |
| FQD3N60CTM-WS-CUT TAPE | Neu und Original |