FQD8P10T

FQD8P10TM vs FQD8P10TF vs FQD8P10TF_NB82052

 
PartNumberFQD8P10TMFQD8P10TFFQD8P10TF_NB82052
DescriptionMOSFET 100V P-Channel QFETMOSFET 100V P-Channel QFETMOSFET P-CH 100V 6.6A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current6.6 A6.6 A-
Rds On Drain Source Resistance530 mOhms530 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD8P10--
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min4.1 S4.1 S-
Fall Time35 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time110 ns110 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesFQD8P10TM_NLFQD8P10TF_NL-
Unit Weight0.009184 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD8P10TM MOSFET 100V P-Channel QFET
FQD8P10TM-F085 MOSFET 100V P-Channel QFET
FQD8P10TF MOSFET 100V P-Channel QFET
ON Semiconductor
ON Semiconductor
FQD8P10TF MOSFET P-CH 100V 6.6A DPAK
FQD8P10TF_NB82052 MOSFET P-CH 100V 6.6A DPAK
FQD8P10TM MOSFET P-CH 100V 6.6A DPAK
FQD8P10TM-F085 MOSFET P-CH 100V 6.6A DPAK-3
FQD8P10TM_F080 MOSFET P-CH 100V 6.6A DPAK
FQD8P10TM_SB82052 MOSFET P-CH 100V 6.6A DPAK
FQD8P10TM-NL Neu und Original
FQD8P10TM_ Neu und Original
FQD8P10TM_F085 Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R (Alt: FQD8P10TM-F085)
FQD8P10TM-CUT TAPE Neu und Original
Top