FQI3N

FQI3N25TU vs FQI3N25 vs FQI3N25TUFSC

 
PartNumberFQI3N25TUFQI3N25FQI3N25TUFSC
DescriptionMOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance2.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5.5 ns--
Typical Turn On Delay Time6.6 ns--
Unit Weight0.084199 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI3N80TU MOSFET 800V N-Channel QFET
FQI3N25TU MOSFET
FQI3N30TU MOSFET 300V N-Channel QFET
FQI3N25 Neu und Original
FQI3N25TUFSC Neu und Original
FQI3N30 Neu und Original
FQI3N30TUFSC Neu und Original
FQI3N40TUFSC Neu und Original
FQI3N60 Neu und Original
FQI3N80 Neu und Original
FQI3N90 Neu und Original
ON Semiconductor
ON Semiconductor
FQI3N25TU MOSFET N-CH 250V 2.8A I2PAK
FQI3N30TU MOSFET N-CH 300V 3.2A I2PAK
FQI3N40TU MOSFET N-CH 400V 2.5A I2PAK
FQI3N80TU MOSFET N-CH 800V 3A I2PAK
FQI3N90TU MOSFET N-CH 900V 3.6A I2PAK
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