FQP65

FQP65N06 vs FQP65N06C vs FQP65N06PBF

 
PartNumberFQP65N06FQP65N06CFQP65N06PBF
DescriptionMOSFET TO-220 N-CH 60V 65A
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current65 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP65N06--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min48 S--
Fall Time105 ns--
Product TypeMOSFET--
Rise Time160 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesFQP65N06_NL--
Unit Weight0.063493 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP65N06 MOSFET TO-220 N-CH 60V 65A
FQP65N06C Neu und Original
FQP65N06PBF Neu und Original
ON Semiconductor
ON Semiconductor
FQP65N06 Darlington Transistors MOSFET TO-220 N-CH 60V 65A
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