FQP6N8

FQP6N80C vs FQP6N80

 
PartNumberFQP6N80CFQP6N80
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET 800V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current5.5 A5.8 A
Rds On Drain Source Resistance2.5 Ohms1.95 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation158 W158 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameQFET-
PackagingTubeTube
Height16.3 mm16.3 mm
Length10.67 mm10.67 mm
SeriesFQP6N80CFQP6N80
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min5.4 S5.9 S
Fall Time44 ns45 ns
Product TypeMOSFETMOSFET
Rise Time65 ns70 ns
Factory Pack Quantity100050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time47 ns65 ns
Typical Turn On Delay Time26 ns30 ns
Part # AliasesFQP6N80C_NL-
Unit Weight0.063493 oz0.063493 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP6N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQP6N80 MOSFET 800V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQP6N80 MOSFET N-CH 800V 5.8A TO-220
FQP6N80C MOSFET N-CH 800V 5.5A TO-220
FQP6N80,FQP6N80C Neu und Original
FQP6N80C,6N80C, Neu und Original
FQP6N80C,6N80C,FQP6N80,6 Neu und Original
FQP6N80C,6N80C,FQP6N80,6N80 Neu und Original
FQP6N80C,6N80C,FQP6N80,6N80, Neu und Original
FQP6N80C,FQP8N80C Neu und Original
FQP6N80C,FQPF6N80C,6N80C Neu und Original
FQP6N80C,FQPF6N80C,6N80C,6N80, Neu und Original
FQP6N80C-TU Neu und Original
FQP6N80C/FQP12N60C Neu und Original
FQP6N80C/FQP4N90C Neu und Original
Top