PartNumber | FQP6N80C | FQP6N80 |
Description | MOSFET 800V N-Ch Q-FET advance C-Series | MOSFET 800V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V |
Id Continuous Drain Current | 5.5 A | 5.8 A |
Rds On Drain Source Resistance | 2.5 Ohms | 1.95 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 158 W | 158 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | QFET | - |
Packaging | Tube | Tube |
Height | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm |
Series | FQP6N80C | FQP6N80 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET |
Width | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 5.4 S | 5.9 S |
Fall Time | 44 ns | 45 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 65 ns | 70 ns |
Factory Pack Quantity | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 47 ns | 65 ns |
Typical Turn On Delay Time | 26 ns | 30 ns |
Part # Aliases | FQP6N80C_NL | - |
Unit Weight | 0.063493 oz | 0.063493 oz |