FQP9N25C

FQP9N25C vs FQP9N25C PB vs FQP9N25C,9N25,

 
PartNumberFQP9N25CFQP9N25C PBFQP9N25C,9N25,
DescriptionMOSFET 250V N-Channel Advance Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current8.8 A--
Rds On Drain Source Resistance430 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation74 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min7 S--
Fall Time65 ns--
Product TypeMOSFET--
Rise Time85 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.050717 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP9N25C MOSFET 250V N-Channel Advance Q-FET
ON Semiconductor
ON Semiconductor
FQP9N25C MOSFET N-CH 250V 8.8A TO-220
FQP9N25CTSTU MOSFET N-CH 250V 8.8A TO-220
FQP9N25C PB Neu und Original
FQP9N25C,9N25, Neu und Original
FQP9N25C,9N25C, Neu und Original
FQP9N25C,9N25C,9N25 Neu und Original
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