FQPF10N60

FQPF10N60C vs FQPF10N60 vs FQPF10N60C ,FQPF10N60CT

 
PartNumberFQPF10N60CFQPF10N60FQPF10N60C ,FQPF10N60CT
DescriptionMOSFET 600V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current9.5 A--
Rds On Drain Source Resistance730 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQPF10N60C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Fall Time77 ns--
Product TypeMOSFET--
Rise Time69 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time144 ns--
Typical Turn On Delay Time23 ns--
Part # AliasesFQPF10N60C_NL--
Unit Weight0.080072 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF10N60C MOSFET 600V N-Ch Q-FET advance C-Series
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ON Semiconductor
ON Semiconductor
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