 |  |  | |
| PartNumber | FQPF5P20RDTU | FQPF5P20 | FQPF5P10 |
| Description | MOSFET PCH 500V 2A MOSFET | MOSFET 200V P-Channel QFET | MOSFET P-CH 100V 2.9A TO-220F |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Tradename | QFET | QFET | - |
| Packaging | Tube | Tube | - |
| Height | 16.07 mm | 16.07 mm | - |
| Length | 10.36 mm | 10.36 mm | - |
| Series | FQPF5P20RDTU | FQPF5P20 | - |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.090478 oz | 0.080072 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 200 V | - |
| Id Continuous Drain Current | - | 3.4 A | - |
| Rds On Drain Source Resistance | - | 1.4 Ohms | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 38 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 P-Channel | - |
| Type | - | MOSFET | - |
| Forward Transconductance Min | - | 2.15 S | - |
| Fall Time | - | 25 ns | - |
| Rise Time | - | 70 ns | - |
| Typical Turn Off Delay Time | - | 12 ns | - |
| Typical Turn On Delay Time | - | 9 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF5P20RDTU | MOSFET PCH 500V 2A MOSFET | |
| FQPF5P20 | MOSFET 200V P-Channel QFET | ||
ON Semiconductor |
FQPF5P10 | MOSFET P-CH 100V 2.9A TO-220F | |
| FQPF5P20 | MOSFET P-CH 200V 3.4A TO-220F | ||
| FQPF5P20RDTU | MOSFET P-CH 200V 2.15A TO220F |