FZ1200R12KF4

FZ1200R12KF4 vs FZ1200R12KF4-S1 vs FZ1200R12KF4NOSA1

 
PartNumberFZ1200R12KF4FZ1200R12KF4-S1FZ1200R12KF4NOSA1
DescriptionIGBT Modules 1200V 1200A SINGLEIGBT MODULE 1200V 1200A
ManufacturerInfineo--
Product CategoryModule--
ProductIGBT Silicon Modules--
Mounting StyleSMD/SMT--
Package CaseIHM130--
ConfigurationDual--
Pd Power Dissipation7.8 kW--
Maximum Operating Temperature+ 125 C--
Minimum Operating Temperature- 40 C--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.7 V--
Continuous Collector Current at 25 C1200 A--
Gate Emitter Leakage Current400 nA--
Maximum Gate Emitter Voltage+/- 20 V--
Hersteller Teil # Beschreibung RFQ
FZ1200R12KF4 IGBT Modules 1200V 1200A SINGLE
FZ1200R12KF4-S1 Neu und Original
FZ1200R12KF4S1 Neu und Original
Infineon Technologies
Infineon Technologies
FZ1200R12KF4NOSA1 IGBT MODULE 1200V 1200A
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