FZ1200R16KF4

FZ1200R16KF4 vs FZ1200R16KF4-S1 vs FZ1200R16KF4NOSA1

 
PartNumberFZ1200R16KF4FZ1200R16KF4-S1FZ1200R16KF4NOSA1
DescriptionIGBT Modules 1600V 1200A SINGLEInsulated Gate Bipolar Transistor, 1200A I(C), 1600V V(BR)CES, N-Channel
ManufacturerEUPEC--
Product CategoryIC Chips--
ProductIGBT Silicon Modules--
Mounting StyleSMD/SMT--
Package CaseIHM130--
ConfigurationDual--
Pd Power Dissipation7.8 kW--
Maximum Operating Temperature+ 125 C--
Minimum Operating Temperature- 40 C--
Collector Emitter Voltage VCEO Max1600 V--
Collector Emitter Saturation Voltage3.5 V--
Continuous Collector Current at 25 C1200 A--
Gate Emitter Leakage Current400 nA--
Maximum Gate Emitter Voltage+/- 20 V--
Hersteller Teil # Beschreibung RFQ
FZ1200R16KF4 IGBT Modules 1600V 1200A SINGLE
FZ1200R16KF4-S1 Neu und Original
FZ1200R16KF4S1 IGBT Modules 1600V 1200A SINGLE
FZ1200R16KF4NOSA1 Insulated Gate Bipolar Transistor, 1200A I(C), 1600V V(BR)CES, N-Channel
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