FZT1151AT

FZT1151ATA vs FZT1151ATA-79 vs FZT1151ATAPBF

 
PartNumberFZT1151ATAFZT1151ATA-79FZT1151ATAPBF
DescriptionBipolar Transistors - BJT PNP High Gain & Crnt
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSE--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 45 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 200 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT145 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT115--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 3 A--
Pd Power Dissipation2.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
FZT1151ATA Bipolar Transistors - BJT PNP High Gain & Crnt
FZT1151ATC Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1151ATA Bipolar Transistors - BJT PNP High Gain & Crnt
FZT1151ATA-79 Neu und Original
FZT1151ATAPBF Neu und Original
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