GS81302D11G

GS81302D11GE-350 vs GS81302D11GE-400 vs GS81302D11GE-350I

 
PartNumberGS81302D11GE-350GS81302D11GE-400GS81302D11GE-350I
DescriptionSRAM 1.8 or 1.5V 16M x 9 144MSRAM 1.8 or 1.5V 16M x 9 144MSRAM 1.8 or 1.5V 16M x 9 144M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size144 Mbit144 Mbit144 Mbit
Organization16 M x 916 M x 916 M x 9
Maximum Clock Frequency350 MHz400 MHz350 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max940 mA1.055 A950 mA
Minimum Operating Temperature0 C0 C- 40 C
Maximum Operating Temperature+ 70 C+ 70 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeQDR-IIQDR-IIQDR-II
SeriesGS81302D11GEGS81302D11GEGS81302D11GE
TypeSigmaQuad-II+SigmaQuad-II+SigmaQuad-II+
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity101010
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSigmaQuad-II+SigmaQuad-II+SigmaQuad-II+
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS81302D11GE-500 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-350 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-400 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-350I SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-450 SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-400I SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-450I SRAM 1.8 or 1.5V 16M x 9 144M
GS81302D11GE-500I SRAM 1.8 or 1.5V 16M x 9 144M
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