GS81302TT37E

GS81302TT37E-300 vs GS81302TT37E-300I vs GS81302TT37E-333

 
PartNumberGS81302TT37E-300GS81302TT37E-300IGS81302TT37E-333
DescriptionSRAM 1.8 or 1.5V 4M x 36 144MSRAM 1.8 or 1.5V 4M x 36 144MSRAM 1.8 or 1.5V 4M x 36 144M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSNNN
Memory Size72 Mbit144 Mbit144 Mbit
Organization4 M x 184 M x 364 M x 36
Access Time8.5 ns--
Maximum Clock Frequency133 MHz300 MHz333 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max2.7 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max210 mA, 250 mA790 mA850 mA
Minimum Operating Temperature0 C- 40 C0 C
Maximum Operating Temperature+ 70 C+ 85 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeSDRDDR-IIDDR-II
SeriesGS8644Z18EGS81302TT37EGS81302TT37E
TypeNBT MCMSigmaDDR-II+ B2SigmaDDR-II+ B2
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity151010
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameNBT SRAMSigmaDDR-II+SigmaDDR-II+
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS81302TT37E-300 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-350 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-350I SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-300I SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-333 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-400 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-333I SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-450 SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-400I SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT37E-450I SRAM 1.8 or 1.5V 4M x 36 144M
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