GS816132DGD-2

GS816132DGD-200IV vs GS816132DGD-200 vs GS816132DGD-200I

 
PartNumberGS816132DGD-200IVGS816132DGD-200GS816132DGD-200I
DescriptionSRAM 1.8/2.5V 512K x 32 16MSRAM 2.5 or 3.3V 512K x 32 16MSRAM 2.5 or 3.3V 512K x 32 16M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size18 Mbit18 Mbit18 Mbit
Organization512 k x 32512 k x 32512 k x 32
Access Time6.5 ns6.5 ns6.5 ns
Maximum Clock Frequency200 MHz200 MHz200 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max2.7 V3.6 V3.6 V
Supply Voltage Min1.7 V2.3 V2.3 V
Supply Current Max225 mA, 230 mA210 mA, 210 mA230 mA, 230 mA
Minimum Operating Temperature- 40 C0 C- 40 C
Maximum Operating Temperature+ 85 C+ 70 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeSDRSDRSDR
SeriesGS816132DGDGS816132DGDGS816132DGD
TypeSynchronous BurstPipeline/Flow ThroughPipeline/Flow Through
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity183636
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS816132DGD-250I SRAM 2.5 or 3.3V 512K x 32 16M
GS816132DGD-200IV SRAM 1.8/2.5V 512K x 32 16M
GS816132DGD-250 SRAM 2.5 or 3.3V 512K x 32 16M
GS816132DGD-200 SRAM 2.5 or 3.3V 512K x 32 16M
GS816132DGD-200I SRAM 2.5 or 3.3V 512K x 32 16M
GS816132DGD-200V SRAM 1.8/2.5V 512K x 32 16M
GS816132DGD-250V SRAM 1.8/2.5V 512K x 32 16M
GS816132DGD-250IV SRAM 1.8/2.5V 512K x 32 16M
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