GS8161E18DD

GS8161E18DD-150IV vs GS8161E18DD-150I vs GS8161E18DD-150

 
PartNumberGS8161E18DD-150IVGS8161E18DD-150IGS8161E18DD-150
DescriptionSRAM 1.8/2.5V 1M x 18 18MSRAM 2.5 or 3.3V 1M x 18 18MSRAM 2.5 or 3.3V 1M x 18 18M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
Memory Size18 Mbit--
Organization1 M x 18--
Access Time7.5 ns--
Maximum Clock Frequency150 MHz--
Interface TypeParallel--
Supply Voltage Max2.7 V--
Supply Voltage Min1.7 V--
Supply Current Max180 mA, 200 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseBGA-165--
PackagingTrayTrayTray
Memory TypeSDR--
SeriesGS8161E18DDGS8161E18DDGS8161E18DD
TypeDCD Pipeline/Flow Through--
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity183636
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS8161E18DD-250IV SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-375I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-375 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-200V SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-200IV SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-200I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-250V SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-200 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150IV SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-150I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-250I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-250 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-333 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150V SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-333V SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-333I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-400 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-400I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-333IV SRAM 1.8/2.5V 1M x 18 18M
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