 | | | |
| PartNumber | GS8161E36DD-333IV | GS8161E36DD-333 | GS8161E36DD-333I |
| Description | SRAM 1.8/2.5V 512K x 36 18M | SRAM 2.5 or 3.3V 512K x 36 18M | SRAM 2.5 or 3.3V 512K x 36 18M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| Memory Size | 18 Mbit | 18 Mbit | 18 Mbit |
| Organization | 512 k x 36 | 512 k x 36 | 512 k x 36 |
| Access Time | 5 ns | 4.5 ns | 4.5 ns |
| Maximum Clock Frequency | 333 MHz | 333 MHz | 333 MHz |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 2.7 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 1.7 V | 2.3 V | 2.3 V |
| Supply Current Max | 260 mA, 330 mA | 260 mA, 315 mA | 280 mA, 335 mA |
| Minimum Operating Temperature | - 40 C | 0 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 70 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | BGA-165 | BGA-165 | BGA-165 |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | SDR | SDR |
| Series | GS8161E36DD | GS8161E36DD | GS8161E36DD |
| Type | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 18 | 36 | 36 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
GSI Technology |
GS8161E36DD-375I | SRAM 2.5 or 3.3V 512K x 36 18M | |
| GS8161E36DD-333V | SRAM 1.8/2.5V 512K x 36 18M | ||
| GS8161E36DD-333IV | SRAM 1.8/2.5V 512K x 36 18M | ||
| GS8161E36DD-333 | SRAM 2.5 or 3.3V 512K x 36 18M | ||
| GS8161E36DD-375 | SRAM 2.5 or 3.3V 512K x 36 18M | ||
| GS8161E36DD-333I | SRAM 2.5 or 3.3V 512K x 36 18M |