GS816218DB-20

GS816218DB-200I vs GS816218DB-200IV vs GS816218DB-200

 
PartNumberGS816218DB-200IGS816218DB-200IVGS816218DB-200
DescriptionSRAM 2.5 or 3.3V 1M x 18 18MSRAM 1.8/2.5V 1M x 18 18MSRAM 2.5 or 3.3V 1M x 18 18M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
PackagingTrayTrayTray
SeriesGS816218DBGS816218DBGS816218DB
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity212121
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
Memory Size-18 Mbit18 Mbit
Organization-1 M x 181 M x 18
Access Time-6.5 ns6.5 ns
Maximum Clock Frequency-200 MHz200 MHz
Interface Type-ParallelParallel
Supply Voltage Max-2.7 V3.6 V
Supply Voltage Min-1.7 V2.3 V
Supply Current Max-210 mA, 215 mA195 mA, 195 mA
Minimum Operating Temperature-- 40 C0 C
Maximum Operating Temperature-+ 85 C+ 70 C
Mounting Style-SMD/SMTSMD/SMT
Package / Case-BGA-119BGA-119
Memory Type-SDRSDR
Type-Pipeline/Flow ThroughPipeline/Flow Through
RoHS--N
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS816218DB-200M SRAM 2.5 or 3.3V 1M x 18 18M
GS816218DB-200I SRAM 2.5 or 3.3V 1M x 18 18M
GS816218DB-200IV SRAM 1.8/2.5V 1M x 18 18M
GS816218DB-200 SRAM 2.5 or 3.3V 1M x 18 18M
GS816218DB-200V SRAM 1.8/2.5V 1M x 18 18M
Top