GS8321E36AD-2

GS8321E36AD-200I vs GS8321E36AD-200 vs GS8321E36AD-200IV

 
PartNumberGS8321E36AD-200IGS8321E36AD-200GS8321E36AD-200IV
DescriptionSRAM 2.5 or 3.3V 1M x 36 36MSRAM 2.5 or 3.3V 1M x 36 36MSRAM 1.8/2.5V 1M x 36 36M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
Memory Size36 Mbit36 Mbit36 Mbit
Organization1 M x 361 M x 361 M x 36
Access Time6.5 ns6.5 ns6.5 ns
Maximum Clock Frequency200 MHz200 MHz200 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max3.6 V3.6 V2.7 V
Supply Voltage Min2.3 V2.3 V1.7 V
Supply Current Max225 mA, 260 mA205 mA, 240 mA235 mA, 270 mA
Minimum Operating Temperature- 40 C0 C- 40 C
Maximum Operating Temperature+ 85 C+ 70 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeSDRSDRSDR
SeriesGS8321E36ADGS8321E36ADGS8321E36AD
TypeDCD Pipeline/Flow ThroughDCD Pipeline/Flow ThroughSynchronous Burst
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity181818
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
RoHS-N-
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS8321E36AD-200I SRAM 2.5 or 3.3V 1M x 36 36M
GS8321E36AD-250I SRAM 2.5 or 3.3V 1M x 36 36M
GS8321E36AD-200V SRAM 1.8/2.5V 1M x 36 36M
GS8321E36AD-200 SRAM 2.5 or 3.3V 1M x 36 36M
GS8321E36AD-250 SRAM 2.5 or 3.3V 1M x 36 36M
GS8321E36AD-200IV SRAM 1.8/2.5V 1M x 36 36M
GS8321E36AD-250IV SRAM 1.8/2.5V 1M x 36 36M
GS8321E36AD-250V SRAM 1.8/2.5V 1M x 36 36M
GS8321E36AD-250 SRAM Chip Sync Quad 2.5V/3.3V 36M-Bit 1M x 36 5.5ns/2.5ns 165-Pin FBGA - Bulk (Alt: GS8321E36AD-250)
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