GS8342TT10BG

GS8342TT10BGD-300I vs GS8342TT10BGD-333 vs GS8342TT10BGD-300

 
PartNumberGS8342TT10BGD-300IGS8342TT10BGD-333GS8342TT10BGD-300
DescriptionSRAM 1.8 or 1.5V 4M x 9 36MSRAM 1.8 or 1.5V 4M x 9 36MSRAM 1.8 or 1.5V 4M x 9 36M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size36 Mbit36 Mbit36 Mbit
Organization4 M x 94 M x 94 M x 9
Maximum Clock Frequency300 MHz333 MHz300 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max460 mA515 mA450 mA
Minimum Operating Temperature- 40 C0 C0 C
Maximum Operating Temperature+ 85 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeDDR-IIDDR-IIDDR-II
SeriesGS8342TT10BGDGS8342TT10BGDGS8342TT10BGD
TypeSigmaDDR-II+ B2SigmaDDR-II+ B2SigmaDDR-II+ B2
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity151515
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSigmaDDR-II+SigmaDDR-II+SigmaDDR-II+
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS8342TT10BGD-300I SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-333 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-450I SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-300 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-350 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-333I SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-400 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-350I SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-450 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT10BGD-400I SRAM 1.8 or 1.5V 4M x 9 36M
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