 | | | |
| PartNumber | GS881E32CGT-333 | GS881E32CGT-300 | GS881E32CGT-300I |
| Description | SRAM 2.5 or 3.3V 256K x 32 8M | SRAM 2.5 or 3.3V 256K x 32 8M | SRAM 2.5 or 3.3V 256K x 32 8M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 9 Mbit | 9 Mbit | 9 Mbit |
| Organization | 256 k x 32 | 256 k x 32 | 256 k x 32 |
| Access Time | 4.5 ns | 5 ns | 5 ns |
| Maximum Clock Frequency | 333 MHz | 300 MHz | 300 MHz |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 2.3 V | 2.3 V | 2.3 V |
| Supply Current Max | 180 mA, 240 mA | 165 mA, 225 mA | 185 mA, 245 mA |
| Minimum Operating Temperature | 0 C | 0 C | - 40 C |
| Maximum Operating Temperature | + 70 C | + 70 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TQFP-100 | TQFP-100 | TQFP-100 |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | SDR | SDR |
| Series | GS881E32CGT | GS881E32CGT | GS881E32CGT |
| Type | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 36 | 36 | 36 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
GSI Technology |
GS881E32CGT-333 | SRAM 2.5 or 3.3V 256K x 32 8M | |
| GS881E32CGT-300 | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CGT-300I | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CGT-333I | SRAM 2.5 or 3.3V 256K x 32 8M |