GS88218CD

GS88218CD-150I vs GS88218CD-150 vs GS88218CD-150IV

 
PartNumberGS88218CD-150IGS88218CD-150GS88218CD-150IV
DescriptionSRAM 2.5 or 3.3V 512K x 18 9MSRAM 2.5 or 3.3V 512K x 18 9MSRAM 1.8/2.5V 512K x 18 9M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
PackagingTrayTrayTray
SeriesGS88218CDGS88218CDGS88218CD
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity727266
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
RoHS-N-
Memory Size-9 Mbit9 Mbit
Organization-512 k x 18512 k x 18
Access Time-7.5 ns7.5 ns
Maximum Clock Frequency-150 MHz150 MHz
Interface Type-ParallelParallel
Supply Voltage Max-3.6 V2.7 V
Supply Voltage Min-2.3 V1.7 V
Supply Current Max-120 mA, 130 mA125 mA, 135 mA
Minimum Operating Temperature-0 C- 40 C
Maximum Operating Temperature-+ 70 C+ 85 C
Mounting Style-SMD/SMTSMD/SMT
Package / Case-BGA-165BGA-165
Memory Type-SDRSDR
Type-Pipeline/Flow ThroughSCD/DCD
Hersteller Teil # Beschreibung RFQ
GSI Technology
GSI Technology
GS88218CD-200I SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-150I SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-300I SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-200V SRAM 1.8/2.5V 512K x 18 9M
GS88218CD-200 SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-333 SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-150 SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-250 SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-300 SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-250I SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-333I SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-150IV SRAM 1.8/2.5V 512K x 18 9M
GS88218CD-200IV SRAM 1.8/2.5V 512K x 18 9M
GS88218CD-250IV SRAM 1.8/2.5V 512K x 18 9M
GS88218CD-300M SRAM 2.5 or 3.3V 512K x 18 9M
GS88218CD-150V SRAM 1.8/2.5V 512K x 18 9M
GS88218CD-250V SRAM 1.8/2.5V 512K x 18 9M
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