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GT10J31

GT10J311 vs GT10J312 vs GT10J312 10J312

 
PartNumberGT10J311GT10J312GT10J312 10J312
DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
Manufacturer-TOSHIBA-
Product Category-IGBTs - Single-
Hersteller Teil # Beschreibung RFQ
GT10J311 Neu und Original
GT10J312 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
GT10J312 10J312 Neu und Original
GT10J312SM Neu und Original
GT10J312(Q)-ND Neu und Original
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