PartNumber | GT30J121(Q) | GT30J101 | GT30J121 |
Description | IGBT Transistors 600V/30A DIS | 30A, 600V, N-CHANNEL IGBT | |
Manufacturer | Toshiba | TOSHIBA | TOSHIBA |
Product Category | IGBT Transistors | IC Chips | IGBTs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-3P | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 30 A | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | GT30J121 | - | - |
Continuous Collector Current Ic Max | 30 A | - | - |
Height | 19 mm | - | - |
Length | 15.9 mm | - | - |
Width | 4.8 mm | - | - |
Brand | Toshiba | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.238311 oz | - | - |