H11A817C30

H11A817C300W vs H11A817C300 vs H11A817C300W_NL

 
PartNumberH11A817C300WH11A817C300H11A817C300W_NL
DescriptionTransistor Output Optocouplers Optocoupler PhototransistorOPTOISO 5.3KV TRANSISTOR 4DIP
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryTransistor Output OptocouplersOptoisolators - Transistor, Photovoltaic Output-
RoHSY--
Package / CasePDIP-4--
Output TypeNPN PhototransistorTransistor-
Number of Channels1 Channel1-
If Forward Current50 mA--
Maximum Collector Emitter Voltage70 V--
Maximum Collector Current50 mA--
Isolation Voltage5000 Vrms--
Maximum Collector Emitter Saturation Voltage0.2 V--
Vf Forward Voltage1.5 V--
Vr Reverse Voltage6 V--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 100 C--
PackagingBulkTube-
Configuration1 Channel--
Height4 mm--
Length5.1 mm--
Width7 mm--
BrandON Semiconductor / Fairchild--
Current Transfer Ratio400 %--
Fall Time18 us--
Product TypeTransistor Output Optocouplers--
Rise Time18 us--
Factory Pack Quantity2000--
SubcategoryOptocouplers--
Series---
Package Case-4-DIP (0.300", 7.62mm)-
Input Type-DC-
Operating Temperature--55°C ~ 100°C-
Mounting Type-Through Hole-
Supplier Device Package-4-DIP-
Current Output Channel-50mA-
Voltage Output Max-70V-
Current DC Forward If Max-50mA-
Voltage Isolation-5300Vrms-
Voltage Forward Vf Typ-1.2V-
Current Transfer Ratio Min-200% @ 5mA-
Current Transfer Ratio Max-400% @ 5mA-
Turn On Turn Off Time Typ---
Rise Fall Time Typ-2.4μs, 2.4μs-
Vce Saturation Max-200mV-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
H11A817C300W Transistor Output Optocouplers Optocoupler Phototransistor
ON Semiconductor
ON Semiconductor
H11A817C300 OPTOISO 5.3KV TRANSISTOR 4DIP
H11A817C300W OPTOISO 5.3KV TRANSISTOR 4DIP
H11A817C300W_NL Neu und Original
H11A817C300_NF098 Neu und Original
Top