OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

HGTD8

HGTD8P50G1 vs HGTD8P50G1S vs HGTD8P50G1S9A

 
PartNumberHGTD8P50G1HGTD8P50G1SHGTD8P50G1S9A
DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-251AAInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA
Hersteller Teil # Beschreibung RFQ
HGTD8P50G1 Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-251AA
HGTD8P50G1S Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA
HGTD8P50G1S9A Neu und Original
Top