HGTG30N60A4D

HGTG30N60A4D vs HGTG30N60A4D G30N60A4D vs HGTG30N60A4D,30N60A4D

 
PartNumberHGTG30N60A4DHGTG30N60A4D G30N60A4DHGTG30N60A4D,30N60A4D
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS Series
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSE--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation463 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTG30N60A4D--
PackagingTube--
Continuous Collector Current Ic Max75 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current75 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesHGTG30N60A4D_NL--
Unit Weight0.225401 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG30N60A4D IGBT Transistors 600V N-Channel IGBT SMPS Series
ON Semiconductor
ON Semiconductor
HGTG30N60A4D IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60A4D G30N60A4D Neu und Original
HGTG30N60A4D,30N60A4D Neu und Original
HGTG30N60A4D,G30N60A4D,G Neu und Original
HGTG30N60A4D,HGTG30N60A4 Neu und Original
HGTG30N60A4D-NL Neu und Original
HGTG30N60A4D-- Neu und Original
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