PartNumber | HN1A01FE-GR,LF | HN1A01FE | HN1A01FE-GR |
Description | Bipolar Transistors - BJT Bias Resistor Built-in transistor | ||
Manufacturer | Toshiba | - | TOSHIBA |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ES6-6 | - | - |
Transistor Polarity | PNP | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Collector Base Voltage VCBO | - 50 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.3 V | - | - |
Maximum DC Collector Current | - 150 mA | - | - |
Gain Bandwidth Product fT | 80 MHz | - | - |
Series | HN1A01 | - | - |
DC Current Gain hFE Max | 400 | - | - |
Packaging | Reel | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | - 150 mA | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 100 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | Transistors | - | - |