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HN1B01FDW1T

HN1B01FDW1T1G vs HN1B01FDW1T1 vs HN1B01FDW1T1-D

 
PartNumberHN1B01FDW1T1GHN1B01FDW1T1HN1B01FDW1T1-D
DescriptionBipolar Transistors - BJT 200mA 60V Dual ComplementaryTRANS NPN/PNP 50V 0.2A SC74
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-74-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage- 0.15 V--
Maximum DC Collector Current0.2 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHN1B01FDW1--
Height0.94 mm--
Length3 mm--
PackagingReelTape & Reel (TR)-
Width1.5 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation380 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000474 oz--
Package Case-SC-74, SOT-457-
Mounting Type-Surface Mount-
Supplier Device Package-SC-74-
Power Max-380mW-
Transistor Type-NPN, PNP-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-200 @ 2mA, 6V-
Vce Saturation Max Ib Ic-250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA-
Current Collector Cutoff Max-2μA-
Frequency Transition---
Hersteller Teil # Beschreibung RFQ
HN1B01FDW1T1G Bipolar Transistors - BJT 200mA 60V Dual Complementary
HN1B01FDW1T1-D Neu und Original
ON Semiconductor
ON Semiconductor 		HN1B01FDW1T1G Bipolar Transistors - BJT 200mA 60V Dual Complementary
HN1B01FDW1T1 TRANS NPN/PNP 50V 0.2A SC74
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