HN2

HN2C01FU-Y(TE85L,F vs HN2D01FTE85LF vs HN2D01FU(TE85L,F)

 
PartNumberHN2C01FU-Y(TE85L,FHN2D01FTE85LFHN2D01FU(TE85L,F)
DescriptionBipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=200mW F=80MHzDiodes - General Purpose, Power, Switching Switching Diode 3 Circuit 0.08A 80VDiodes - General Purpose, Power, Switching Switching diode, 80V 80V, 0.08A US6
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - BJTDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching
TechnologySi--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSMT-6SOT-26-6SOT-363-6
Transistor PolarityNPN--
ConfigurationDualTripleTriple
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.1 V--
Maximum DC Collector Current150 mA--
Gain Bandwidth Product fT80 MHz--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 125 C-+ 125 C
DC Current Gain hFE Max400--
PackagingReelReelReel
BrandToshibaToshibaToshiba
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation200 mW300 mW200 mW
Product TypeBJTs - Bipolar TransistorsDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching
Factory Pack Quantity300030003000
SubcategoryTransistorsDiodes & RectifiersDiodes & Rectifiers
RoHS-YY
Product-Switching DiodesSwitching Diodes
Peak Reverse Voltage-85 V85 V
Max Surge Current-1 A1 A
If Forward Current-80 mA80 mA
Series-HN2D01HN2D01
Maximum Diode Capacitance-3 pF3 pF
Unit Weight-0.001058 oz0.000265 oz
Recovery Time--1.6 ns
Vf Forward Voltage--0.98 V
Ir Reverse Current--0.5 uA
Vr Reverse Voltage--80 V
  • Beginnen mit
  • HN2 596
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
HN2C01FU-Y(TE85L,F Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=200mW F=80MHz
HN2D01FTE85LF Diodes - General Purpose, Power, Switching Switching Diode 3 Circuit 0.08A 80V
HN2D01FU(TE85L,F) Diodes - General Purpose, Power, Switching Switching diode, 80V 80V, 0.08A US6
HN2D01FTE85LF Diodes - General Purpose, Power, Switching Switching Diode 3 Circuit 0.08A 80V
HN2D01FU(TE85L,F) Diodes - General Purpose, Power, Switching Switching diode, 80V 80V, 0.08A US6
HN2C01FU-Y(TE85L,F Neu und Original
HN2C01FU-GR(T5LF)CT-ND Neu und Original
HN2C01FU-GR(T5LF)DKR-ND Neu und Original
HN2C01FU-GR(T5LF)TR-ND Neu und Original
HN2C01FU-Y(TE85LFCT-ND Neu und Original
HN2C01FU-Y(TE85LFDKR-ND Neu und Original
HN2C01FU-Y(TE85LFTR-ND Neu und Original
HN2D01FTE85LFCT-ND Neu und Original
HN2D01FTE85LFDKR-ND Neu und Original
HN2D01FTE85LFTR-ND Neu und Original
HN2D01FU(TE85LF)CT-ND Neu und Original
HN2D01FU(TE85LF)DKR-ND Neu und Original
HN2C01FU-Y Neu und Original
HN2C01FU-Y / L1Y Neu und Original
HN2C01FU-Y(L1Y) Neu und Original
HN2C01FU-Y(TE85L,F) Neu und Original
HN2C01FU-Y(TE85LF) Neu und Original
HN2C01FV-GR Neu und Original
HN2C01FV-GR(TE85L) Neu und Original
HN2C02FU Neu und Original
HN2C10FUTE85L Neu und Original
HN2C12FT Neu und Original
HN2C12FT-O Neu und Original
HN2C12FU Neu und Original
HN2D01F Neu und Original
HN2D01F / A1 Neu und Original
HN2D01F TE85L Neu und Original
HN2D01F(T5LPPF) Neu und Original
HN2D01F(TE85L) Neu und Original
HN2D01F(TE85L,F) Neu und Original
HN2D01F(TE85LF) Neu und Original
HN2D01F(TE85R) Neu und Original
HN2D01FU 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE
HN2D01FU / A1 Neu und Original
HN2D01FU TE85L Neu und Original
HN2D01FU TE85LF Neu und Original
HN2D01FU(TE85L) Neu und Original
HN2D01FU(TE85L) SOT36 Neu und Original
HN2D01FU(TE85L) SOT363 Neu und Original
HN2D01FU(TE85R) Neu und Original
HN2D01FU) Neu und Original
HN2D01FUTE85L Neu und Original
HN2C12FU-0 Neu und Original
HN2C12FU-O Neu und Original
HN2D01FU(TE85LF) Neu und Original
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