HUF75307T

HUF75307T3ST vs HUF75307T3S vs HUF75307T3S136

 
PartNumberHUF75307T3STHUF75307T3SHUF75307T3S136
DescriptionMOSFET 15a 55V N-Ch UltraFET 0.099 Ohm
ManufacturerON Semiconductor-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4TO-261-4, TO-261AA-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current2.6 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height1.8 mm--
Length6.5 mm--
ProductMOSFET Small Signal--
SeriesHUF75307T3S--
Transistor Type1 N-Channel--
TypeMOSFET--
Width3.5 mm--
BrandON Semiconductor / Fairchild--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesHUF75307T3ST_NL--
Unit Weight0.003951 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-55V-
Current Continuous Drain (Id) @ 25°C-2.6A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-17nC @ 20V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-250pF @ 25V-
FET Feature---
Power Dissipation (Max)-1.1W (Ta)-
Rds On (Max) @ Id, Vgs-90 mOhm @ 2.6A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-4-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HUF75307T3ST MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm
HUF75307T3S Neu und Original
HUF75307T3S136 Neu und Original
ON Semiconductor
ON Semiconductor
HUF75307T3ST MOSFET N-CH 55V 2.6A SOT-223
HUF75307T3ST136 Neu und Original
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