IDC08S6

IDC08S60CE vs IDC08S60CEX1SA2 vs IDC08S60CEX1SA3

 
PartNumberIDC08S60CEIDC08S60CEX1SA2IDC08S60CEX1SA3
DescriptionSchottky Diodes & Rectifiers SiC Schottky Diode 600V 8ADIODE SIC 600V 8A SAWN WAFERDIODE SIC 600V 8A SAWN WAFER
ManufacturerInfineon Technologies--
Product CategoryDiodes, Rectifiers - Single--
SeriesthinQ!--
Packaging*--
Package Case*--
Mounting Type*--
Supplier Device Package*--
SpeedFast Recovery = 200mA (Io)--
Diode TypeSilicon Carbide Schottky--
Current Reverse Leakage Vr100μA @ 600V--
Voltage Forward Vf Max If1.7V @ 8A--
Voltage DC Reverse Vr Max600V--
Current Average Rectified Io8A (DC)--
Reverse Recovery Time trr---
Capacitance Vr F310pF @ 1V, 1MHz--
Operating Temperature Junction-55°C ~ 175°C--
Hersteller Teil # Beschreibung RFQ
IDC08S60CE Schottky Diodes & Rectifiers SiC Schottky Diode 600V 8A
Infineon Technologies
Infineon Technologies
IDC08S60CEX1SA2 DIODE SIC 600V 8A SAWN WAFER
IDC08S60CEX7SA1 DIODE GEN PURPOSE SAWN WAFER
IDC08S60CEX1SA3 DIODE SIC 600V 8A SAWN WAFER
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