| PartNumber | IFF450B12ME4PB11BPSA1 | IFF450B12ME4S8PB11BPSA1 |
| Description | IGBT Modules | IGBT Modules Description: |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Modules | IGBT Modules |
| RoHS | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 1.75 V | 1.75 V |
| Continuous Collector Current at 25 C | 450 A | 450 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA |
| Pd Power Dissipation | 20 mW | - |
| Package / Case | 152 mm x 62.5 mm x 20.5 mm | - |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Packaging | Tray | Tray |
| Brand | Infineon Technologies | Infineon Technologies |
| Mounting Style | Press Fit | Screw Mount |
| Maximum Gate Emitter Voltage | 15 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 6 | 6 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | SP001377612 | IFF450B12ME4S8P_B11 |