IKW50N60H

IKW50N60H3 vs IKW50N60H3 K50H603 vs IKW50N60H3(K50H603)

 
PartNumberIKW50N60H3IKW50N60H3 K50H603IKW50N60H3(K50H603)
DescriptionIGBT Transistors HIGH SPEED SWITCHING
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.25 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C100 A--
Pd Power Dissipation333 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
Continuous Collector Current Ic Max50 A--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW50N60H3FKSA1 IKW5N6H3XK SP000852244--
Unit Weight1.340411 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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