IKW75N65EH

IKW75N65EH5XKSA1 vs IKW75N65EH5 vs IKW75N65EH5 K75EEH5

 
PartNumberIKW75N65EH5XKSA1IKW75N65EH5IKW75N65EH5 K75EEH5
DescriptionIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is aIGBT, SINGLE, 650V, 90A, TO-247
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C90 A--
Pd Power Dissipation395 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP 5 H5TrenchStop-
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW75N65EH5 SP001257948--
Part Aliases-IKW75N65EH5 SP001257948-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-PG-TO247-3-
Power Max-395W-
Reverse Recovery Time trr-92ns-
Current Collector Ic Max-90A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type-Trench-
Current Collector Pulsed Icm-300A-
Vce on Max Vge Ic-2.1V @ 15V, 75A-
Switching Energy-2.3mJ (on), 900μJ (off)-
Gate Charge-160nC-
Td on off 25°C-28ns/174ns-
Test Condition-400V, 75A, 8 Ohm, 15V-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IKW75N65EH5XKSA1 IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
IKW75N65EH5XKSA1 IGBT TRENCH 650V 90A TO247-3
IKW75N65EH5 IGBT, SINGLE, 650V, 90A, TO-247
IKW75N65EH5 K75EEH5 Neu und Original
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