IMH4AT

IMH4AT110 vs IMH4AT108

 
PartNumberIMH4AT110IMH4AT108
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-457
ManufacturerROHM SemiconductorROHM
Product CategoryBipolar Transistors - Pre-BiasedIC Chips
RoHSY-
ConfigurationDual-
Transistor PolarityNPN-
Typical Input Resistor10 kOhms-
Mounting StyleSMD/SMT-
DC Collector/Base Gain hfe Min100-
Collector Emitter Voltage VCEO Max50 V-
Continuous Collector Current100 mA-
Peak DC Collector Current100 mA-
Pd Power Dissipation300 mW-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
SeriesIMH4A-
PackagingReel-
DC Current Gain hFE Max600-
Emitter Base Voltage VEBO5 V-
Height1.1 mm-
Length2.9 mm-
Width1.6 mm-
BrandROHM Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # AliasesIMH4A-
Unit Weight0.001235 oz-
Hersteller Teil # Beschreibung RFQ
IMH4AT110 Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-457
IMH4AT108 Neu und Original
IMH4AT110 TRANS PREBIAS DUAL NPN SMT6
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