 |  | | |
| PartNumber | IPA041N04NGXKSA1 | IPA041N04NG | IPA041N04NGXKSA1 , 2SD17 |
| Description | MOSFET MV POWER MOS | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 48 S | - | - |
| Fall Time | 4.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.8 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | G IPA041N04N SP001191328 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Part Aliases | - | G IPA041N04N SP001191328 | - |
| Package Case | - | TO-220-3 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA041N04NGXKSA1 | MOSFET MV POWER MOS | |
| IPA041N04NGXKSA1 | MOSFET MV POWER MOS | ||
| IPA041N04NG | Neu und Original | ||
| IPA041N04NGXKSA1 , 2SD17 | Neu und Original |