 |  | | |
| PartNumber | IPA50R190CEXKSA2 | IPA50R190CEXKSA1 | IPA50R190CEXKSA1 , 2SD17 |
| Description | MOSFET N-CH 500V 18.5A TO220FP | Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220FP Tube | |
| Manufacturer | - | Infineon Technologies | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Series | - | IPA50R190 | - |
| Packaging | - | Tube | - |
| Part Aliases | - | IPA50R190CE SP000848220 | - |
| Unit Weight | - | 0.211644 oz | - |
| Mounting Style | - | Through Hole | - |
| Tradename | - | CoolMOS | - |
| Package Case | - | TO-220-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 32 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7.5 ns | - |
| Rise Time | - | 8.5 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 18.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 550 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 500 V | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 54 ns | - |
| Typical Turn On Delay Time | - | 9.5 ns | - |
| Qg Gate Charge | - | 47.2 nC | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA50R190CEXKSA2 | MOSFET N-CH 500V 18.5A TO220FP | |
| IPA50R190CEXKSA1 | Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220FP Tube | ||
| IPA50R190CEXKSA1 , 2SD17 | Neu und Original |