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| PartNumber | IPA50R650CEXKSA2 , 2SD18 | IPA50R650CEXKSA1 | IPA50R650CEXKSA2 |
| Description | Darlington Transistors MOSFET N-Ch 550V 6.1A TO220FP-3 | MOSFET CONSUMER | |
| Manufacturer | - | Infineon Technologies | Infineon Technologies |
| Product Category | - | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | IPA50R650 | - |
| Packaging | - | Tube | Tube |
| Part Aliases | - | SP000992086 | IPA50R650CE SP001217232 |
| Unit Weight | - | 0.211644 oz | - |
| Mounting Style | - | Through Hole | - |
| Tradename | - | CoolMOS | - |
| Package Case | - | TO-220-3 | TO-220-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 27 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 13 ns | - |
| Rise Time | - | 5 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 6.1 A | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 500 V | 500 V |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 27 ns | - |
| Typical Turn On Delay Time | - | 6 ns | - |
| Qg Gate Charge | - | 15 nC | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| IPA50R650CEXKSA2 , 2SD18 | Neu und Original | ||
| IPA50R650CEXKSA1 | Darlington Transistors MOSFET N-Ch 550V 6.1A TO220FP-3 | ||
Infineon Technologies |
IPA50R650CEXKSA2 | MOSFET CONSUMER |