IPA60R125P

IPA60R125P6 vs IPA60R125P6XKSA1 vs IPA60R125P

 
PartNumberIPA60R125P6IPA60R125P6XKSA1IPA60R125P
DescriptionMOSFET HIGH POWER PRICE/PERFORMMOSFET HIGH POWER PRICE/PERFORM
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance113 mOhms113 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge56 nC56 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation34 W34 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTubeTube
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesCoolMOS P6CoolMOS P6XPA60R125
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesIPA60R125P6XKSA1 SP001114652IPA60R125P6 SP001114652-
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Part Aliases--IPA60R125P6XKSA1 SP001114652
Package Case--TO-220-3
Id Continuous Drain Current--150 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--125 Ohms
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPA60R125P6 MOSFET HIGH POWER PRICE/PERFORM
IPA60R125P6XKSA1 MOSFET HIGH POWER PRICE/PERFORM
IPA60R125P6XKSA1 MOSFET N-CH 600V TO220FP-3
IPA60R125P Neu und Original
IPA60R125P6 MOSFET HIGH POWER PRICE/PERFORM
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