IPB014

IPB014N06N vs IPB014N06NATMA1 vs IPB014N06N3G

 
PartNumberIPB014N06NIPB014N06NATMA1IPB014N06N3G
DescriptionMOSFET N-Ch 60V 180A D2PAK-6MOSFET N-Ch 60V 180A D2PAK-6
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance1.2 mOhms1.2 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge124 nC124 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation214 W214 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min120 S120 S-
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time18 ns18 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns47 ns-
Typical Turn On Delay Time22 ns22 ns-
Part # AliasesIPB014N06NATMA1 IPB14N6NXT SP000917408IPB014N06N IPB14N6NXT SP000917408-
Unit Weight0.056438 oz0.056438 oz-
Product-OptiMOS Power-
Type-OptiMOS Power Transistor-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB014N06N MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06NATMA1 MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06NATMA1 IGBT Transistors MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06N MOSFET N-Ch 60V 180A D2PAK-6
IPB014N06N3G Neu und Original
IPB014N06NTR Neu und Original
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