 |  | |
| PartNumber | IPB024N10N5ATMA1 | IPB024N08N5ATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 80V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 80 V |
| Id Continuous Drain Current | 180 A | 120 A |
| Rds On Drain Source Resistance | 2 mOhms | 3.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 138 nC | 99 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 250 W | 214 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Series | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 105 S | 89 S |
| Fall Time | 13 ns | 15 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 14 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 46 ns |
| Typical Turn On Delay Time | 20 ns | 22 ns |
| Part # Aliases | IPB024N10N5 SP001482034 | IPB024N08N5 SP001227044 |
| RoHS | - | Y |
| Height | - | 4.4 mm |
| Length | - | 10 mm |
| Width | - | 9.25 mm |
| Unit Weight | - | 0.139332 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB024N10N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB024N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB024N10N5ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB024N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
| IPB024N08N5 | N-CH 80V 120A 2,4mOhm TO263-3 | ||
| IPB024N10N5 | Neu und Original |