 | | |
| PartNumber | IPB100N10S3-05 | IPB100N10S305ATMA1 |
| Description | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 300 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS-T | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 20 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 17 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | - |
| Typical Turn On Delay Time | 34 ns | - |
| Part # Aliases | IPB100N10S305ATMA1 IPB1N1S35XT SP000261243 | IPB100N10S3-05 IPB1N1S35XT SP000261243 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | |
| IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | ||
| IPB100N10S305ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
Infineon Technologies |
IPB100N10S305ATMA1 | MOSFET N-CHANNEL_100+ | |
| IPB100N10S3-05(1) | Neu und Original | ||
| IPB100N10S3-05. | Neu und Original |