 |  | | |
| PartNumber | IPB320N20N3 G | IPB320N20N3 | IPB320N20N3G |
| Description | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 34 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 27 S | - | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | IPB320N20N3GATMA1 IPB32N2N3GXT SP000691172 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPB320N20N3GATMA1 IPB320N20N3GXT SP000691172 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 136 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 34 A | - |
| Vds Drain Source Breakdown Voltage | - | 200 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 32 mOhms | - |
| Qg Gate Charge | - | 22 nC | - |
| Forward Transconductance Min | - | 54 S 27 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB320N20N3GATMA1 | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | |
| IPB320N20N3 G | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | ||
| IPB320N20N3GATMA1 | MOSFET N-CH 200V 34A TO263-3 | ||
| IPB320N20N3GATMA1-CUT TAPE | Neu und Original | ||
| IPB320N20N3 | Neu und Original | ||
| IPB320N20N3 G | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | ||
| IPB320N20N3G | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263 | ||
| IPB320N20N3G 320N20N | Neu und Original | ||
| IPB320N20N3GS | Neu und Original | ||
| IPB32N03 | Neu und Original | ||
| IPB32N03L | Neu und Original |