IPB45N06S

IPB45N06S3L-13 vs IPB45N06S3-16 vs IPB45N06S409ATMA1

 
PartNumberIPB45N06S3L-13IPB45N06S3-16IPB45N06S409ATMA1
DescriptionMOSFET N-Ch 55V 45A D2PAK-2MOSFET N-CH 55V 45A TO-263MOSFET N-CH 60V 45A TO263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance13.1 mOhms--
Vgs Gate Source Voltage16 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation65 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Fall Time124 ns--
Product TypeMOSFET--
Rise Time46 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time58 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesIPB45N06S3L13XT--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB45N06S4L08ATMA3 MOSFET
IPB45N06S409ATMA2 MOSFET N-Ch 60V 45A D2PAK-2
IPB45N06S409ATMA2 MOSFET N-CH 60V 45A TO263-3
IPB45N06S3-16 MOSFET N-CH 55V 45A TO-263
IPB45N06S3L-13 MOSFET N-CH 55V 45A TO-263
IPB45N06S409ATMA1 MOSFET N-CH 60V 45A TO263-3
IPB45N06S4L08ATMA1 MOSFET N-CH 60V 45A TO263-3
Infineon Technologies
Infineon Technologies
IPB45N06S4L08ATMA1 MOSFET N-CHANNEL_55/60V
IPB45N06S3L-13 MOSFET N-Ch 55V 45A D2PAK-2
IPB45N06S4L08ATMA3 MOSFET_)40V,60V) - Tape and Reel (Alt: IPB45N06S4L08ATMA3)
IPB45N06S4-09 MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2
IPB45N06S4L-08 Transistor MOSFET N-CH 60V 45A 3-Pin TO-263 T/R (Alt: IPB45N06S4L-08)
IPB45N06S4L08ATMA2 Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R - Bulk (Alt: IPB45N06S4L08ATMA2)
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